| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NCP51313 | High Side Gate Driver NCP51313 is a 130 V high side driver with 2.0 A source and 3.0 A sink drive capability for DC−DC power supplies and inverters. NCP51313 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of operation. This device is tailored for highly e | ONSEMI 安森美半导体 |   | |
High Side Gate Driver NCP51313 is a 130 V high side driver with 2.0 A source and 3.0 A sink drive capability for DC−DC power supplies and inverters. NCP51313 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of operation. This device is tailored for highly e | ONSEMI 安森美半导体 | | ||
High Side Gate Driver NCP51313 is a 130 V high side driver with 2.0 A source and 3.0 A sink drive capability for DC−DC power supplies and inverters. NCP51313 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of operation. This device is tailored for highly e | ONSEMI 安森美半导体 | | ||
Synchronous CPU Buck Controller Capable of Implementing Multiple Linear Regulators Description The CS51313 is a synchronous dual NFET Buck Regulator Controller. It is designed to power the core logic of the latest high performance CPUs. It uses the V2TM control method to achieve the fastest possible transient response and best overall regulation. It incorporates many additional | CHERRY | | ||
Synchronous CPU Buck Controller Capable of Implementing Multiple Linear Regulators Synchronous CPU Buck Controller Capable of Implementing Multiple Linear Regulators The CS51313 is a synchronous dual NFET Buck Regulator Controller. It is designed to power the core logic of the latest high performance CPUs. It uses the V2™ control method to achieve the fastest possible transient | ONSEMI 安森美半导体 | | ||
High Side Gate Driver NCV51313 is a 130 V high side driver with 2.0 A source and 3.0 A sink drive capability for DC−DC power supplies and inverters. NCV51313 offers best in class propagation delay, low quiescent current and low switching current at high frequencies of operation. This device is tailored for highly e | ONSEMI 安森美半导体 | | ||
High reliability, solid state silicon pressure sensors 文件：49.26 Kbytes Page：2 Pages | AMPHENOL 安费诺集团 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
246 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
onsemi(安森美) |
24+ |
DFN10(3x3) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
ON/安森美 |
1516+ |
DFN10 |
1155 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON |
24+ |
SOIC-8 |
25000 |
ON全系列可订货 |
|||
ON Semi |
22+ |
NA |
30000 |
原装正品支持实单 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
onsemi |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ON |
23+ |
DNF10 |
3500 |
正规渠道,只有原装! |
|||
ON |
23+ |
VQFN |
20000 |
||||
安森美 |
21+ |
DFN10 |
12588 |
原装正品,自己库存 |
NCP51313规格书下载地址
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NCP51313数据表相关新闻
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2019-11-19NCP5201-双输出DDR电源控制器
说明 在NCP5201双DDR电源控制器是专门作为一个整体功率解决方案专为高电流DDR内存系统。该IC结合了PWM控制器的效率VDDQ电压的线性稳压器为简单的VTT存储器终端电压。二次调节器（VTT）的是设计为自动跟踪一半的初级稳压器（VDDQ的）。内部电源良好电压监控器同时跟踪VDDQ和VTT的输出，并通知在出现故障时，用户其中一项输出。保护功能包括软启动电路和欠压监测VCC和VSTBY。该集成电路的封装5× 6的QFN- 18。 特点 •搭载VDDQ的，的VTT稳压器 •内
2013-2-17NCP5203-2合1 DDR电源控制器
说明 在NCP5203 2合1 DDR电源控制器是一个完整的电源解决方案一符合ACPI高电流DDR内存系统。该IC结合了PWM控制器提供VDDQ效率提供的线性稳压器为简单的VTT终止电压。该NCP5203包含一个同步PWM降压控制器用于驱动两个外部NFETs形成的DDR内存供电电压（VDDQ的）。的？2.0用户可调的VTT终止调节器具有短路保护。一个内部电源同时监视功能良好的VDDQ和Vtt输出和信号如果发生故障。保护功能包括软启动，欠压监测5VDUAL，过电流保护（OCP的）和热关机。该集成电路的封装18引脚QFN封装。 特点
2013-2-17
DdatasheetPDF页码索引
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