位置:首页 > IC中文资料第8979页 > NCP3127CRAGEVB
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCP3127CRAGEVB | 包装:散装 描述:BOARD EVALUATION NCP3127 CERAMIC 开发板,套件,编程器 评估板 - DC/DC 与 AC/DC(离线)SMPS | ONSEMI 安森美半导体 | ||
High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the t | INTERSIL | |||
Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi | INTERSIL | |||
Ultra High Frequency Transistor Arrays The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibi | INTERSIL | |||
CMOS System Reset Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD | MITSUMI 三美 | |||
5-6W, Wide Input Range DIP, Single & Dual Output DC/DC Converters 文件:213.72 Kbytes Page:8 Pages | MINMAX 捷拓科技 |
NCP3127CRAGEVB产品属性
- 类型
描述
- 型号
NCP3127CRAGEVB
- 功能描述
电源管理IC开发工具 NCP3127 CERAMIC EVB
- RoHS
否
- 制造商
Maxim Integrated
- 产品
Evaluation Kits
- 类型
Battery Management
- 工具用于评估
MAX17710GB
- 输出电压
1.8 V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
QFN |
12000 |
正规渠道,只有原装! |
|||
ON(安森美) |
26+ |
NA |
60000 |
只有原装 可配单 |
|||
ON |
24+ |
QFN |
3000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
ON/安森美 |
22+ |
QFN |
12245 |
现货,原厂原装假一罚十! |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
ON |
25+23+ |
QFN |
35988 |
绝对原装正品全新进口深圳现货 |
|||
ONSemiconductor |
24+ |
16-QFN(3x3) |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
|||
onsemi(安森美) |
2021+ |
QFN-16 |
499 |
||||
ON/安森美 |
23+ |
QFN |
23467 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
NCP3127CRAGEVB芯片相关品牌
NCP3127CRAGEVB规格书下载地址
NCP3127CRAGEVB参数引脚图相关
- p800
- p600
- otl功率放大器
- opa642
- opa2604
- op37
- op07中文资料
- op07
- OLED显示屏
- oled发光材料
- OLED材料
- ogs
- OEM
- nvidia
- ntc热敏电阻
- nrf24l01
- nfc芯片
- NFC
- ne555定时器
- ne555
- NCP339
- NCP338
- NCP336
- NCP335
- NCP334
- NCP3337
- NCP3335
- NCP3334
- NCP333
- NCP331
- NCP330
- NCP3235
- NCP3233
- NCP3231
- NCP3230
- NCP3218
- NCP3170AGEVB
- NCP3170ADR2G
- NCP3170
- NCP3163PWR2G
- NCP3163PWG
- NCP3163MNR2G
- NCP3163INVGEVB
- NCP3163INVEVB
- NCP3163BUCKGEVB
- NCP3163BUCKEVB
- NCP3163BSTEVB
- NCP3163BPWR2G
- NCP3163BPWG
- NCP3163BMNR2G
- NCP3163_Invert_EVB
- NCP3163_BUCK_EVB
- NCP3163_Boost_EVB
- NCP3163
- NCP3155BGEVB
- NCP3155BDR2G
- NCP3155AGEVB
- NCP3155ADR2G
- NCP3135
- NCP3134
- NCP3127AGEVB
- NCP3127ADR2G
- NCP3127
- NCP3126CRAGEVB
- NCP3126AGEVB
- NCP3126ADR2G
- NCP3126
- NCP3125CRAGEVB
- NCP3125AGEVB
- NCP3125ADR2G
- NCP3125
- NCP3123QPBCKGEVB
- NCP3123MNTXG-CUT TAPE
- NCP3123MNTXG
- NCP3123
- NCP3122QPBCKGEVB
- NCP3122MNTXG
- NCP3122
- NCP3121QPBCKGEVB
- NCP3121MNTXG
- NCP3121
- NCP3120QPBCKGEVB
- NCP3120MNTXG
- NCP3120
- NCP-3110
- NCP-3108
- NCP3102MNTXG
- NCP3102
- NCP3101
- NCP308
- NCP3066
- NCP3065
- NCP3064
- NCP3063
- NCP305
- NCP304A
- NCP304
- NCP303
- NCP302
- NCP3012
NCP3127CRAGEVB数据表相关新闻
NCP308MT180TBG原包原标低价出
NCP308MT180TBG原包原标低价出
2024-11-9NCP3135MNTXG
降压 开关稳压器 IC 正 可调式 0.6V 1 输出 5A 16-VFQFN 裸露焊盘
2022-10-19NCP3170ADR2G
www.58chip.com
2022-5-11NCP302LSN38T1G 0N
www.hfxcom.com
2021-12-18NCP302LSN43T1G原装现货
NCP302LSN43T1G原装现货
2019-7-29NCP3418-12伏双自举MOSFET的输出驱动器禁用
NCP3418和NCP3418A的是双MOSFET栅极驱动器同时优化驱动高侧和低侧功率之门在MOSFET的同步降压转换器。驱动程序的每一个能够驾驶一辆带有25 ns的传播延迟了3000 pF的负载和20 ns的过渡时间。具有较宽的工作电压范围,高或低边MOSFET栅极驱动电压可优化的最佳效率。内部,自适应非重叠电路,进一步降低了开关损耗防止两个MOSFET同时导通。浮顶的设计可以容纳VBST驱动电压,高达30伏,以高达35五,两个栅极瞬间高电压的输出可以采用低驱动低逻辑电平输出禁用(外径)引脚。欠压锁定功能,确保这两个驱动程序低输出当电源电压为低,一热关控制功能提供了过热保护IC。该NCP34
2013-2-26
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108