30-250V N-Channel SGT-I MOSFET

Super Trench MOSFET

30-250V N-Channel SGT-I MOSFET

NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 6

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 60

VR & GFX ILLUMINATOR KEY PADS

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N-Channel Super Trench Power MOSFET

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