30-250V N-Channel SGT-I MOSFET

丝印代码：NCEP60T20D；N-Channel Super Trench Power MOSFET

文件：1.08383 Mbytes Page：6 Pages

丝印代码：NCEP60T20D；N-Channel Super Trench Power MOSFET

文件：1.09754 Mbytes Page：6 Pages

Super Trench MOSFET

30-250V N-Channel SGT-I MOSFET

丝印代码：E1；60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 6

丝印代码：L7；60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

丝印代码：2M；60 V, 2 A Trench Schottky barrier rectifier

1. General description Trench Schottky barrier rectifier encapsulated in a CFP2-HP (SOD323HP) power flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Low forward voltage • Low Qrr and low IRM • Low leakage current • High power capability due to clip-bondi

丝印代码：L7；60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

文件：233.28 Kbytes Page：14 Pages