60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

封装/外壳：SOD-123W 包装：卷带（TR） 描述：DIODE SCHOTTKY 60V 2A SOD123W 分立半导体产品 二极管 - 整流器 - 单

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 6

60 V, 2 A low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 6

NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP60T20D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

VR & GFX ILLUMINATOR KEY PADS

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N-Channel Super Trench Power MOSFET

文件：1.08383 Mbytes Page：6 Pages