30-250V N-Channel SGT-I MOSFET

30-250V N-Channel SGT-I MOSFET

30-250V N-Channel SGT-I MOSFET

丝印代码：AP40T20AD；NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T20AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

丝印代码：DV；40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 4

丝印代码：L4；40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

丝印代码：DV；40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

文件：227.01 Kbytes Page：14 Pages

丝印代码：L4；40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

文件：229.84 Kbytes Page：14 Pages