40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

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40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

封装/外壳：SOD-123W 包装：卷带（TR） 描述：DIODE SCHOTTKY 40V 2A SOD123W 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：SOD-123W 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40V 2A SOD123W 分立半导体产品 二极管 - 整流器 - 单

40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in a CFP5 (SOD128) small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤ 4

40 V, 2 A low VF Trench MEGA Schottky barrier rectifier

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NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T20AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

NCE Automotive N-Channel Super Trench Power MOSFET

Description The NCEAP40T20AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

NCE Automotive N-Channel Super Trench Power MOSFET

Description The series of devices uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal fo