丝印代码：NCEP1520K；NCE N-Channel Super Trench Power MOSFET

Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-

30-250V N-Channel SGT-I MOSFET

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE

NPN SILICON TRANSISTOR WITH INTEGRATED DIODE ● Designed for Self Oscillating Inverter Applications ● Rugged 1500 V Planar Construction ● Integral Free-Wheeling Anti-Parallel Diode

ULTRAFAST RECTIFIERS 15 AMPERES 200-400-600 VOLTS

SWITCHMODE Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 35 and 60 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Popular TO–220 Package • H

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL1525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL1525CTB series is supplied in the SOT404 surface mo

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

SWITCHMODE Power Rectifiers

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