N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Compound Field Effect Power Transistor

DESCRIPTION The mPA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance ID (DC) = ±2.0 A RDS (on) 1 £ 0.17 W MAX. (VGS = 10 V, ID = 1 A) RDS (on) 1 £ 0.2

Compound Field Effect Power Transistor

DESCRIPTION The mPA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • 4 V driving is possible • Large Current and Low On-state Resistance ID (DC) = ±2.0 A RDS (on) 1 £ 0.17 W MAX. (VGS = 10 V, ID = 1 A) RDS (on) 1 £ 0.2

N-CHANNEL POWER MOS FET ARRAY SWITCHING USE

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Single High-Side Power Switch

DESCRIPTION The AIC1520 is an integrated high-side power switch for self-powered and bus-powered Universal Serial Bus (USB) applications. The high-side switch is a MOSFET with 120m RDS(ON), which meets USB voltage drop requirements for maximum transmission wire length. FEATURES ● 120m (5V Input

10-TAP DIP/SMD DELAY LINE TD/TR = 5

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Insulation testing you can depend on ac/dc voltage measurement up to 600V

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KNOB

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Venture Tape??Aluminum Foil Tape

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