NCE Automotive N-Channel Enhancement Mode Power MOSFET

Description The NCEA4080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =40V,ID =80A RDS(ON)

12-300V N-Channel Automotive MOSFET

20-Bit, 40 MSPS, Differential SAR ADC

FEATURES ► High performance ► Throughput: 40 MSPS, 46.25 ns conversion latency ► INL: ±4 ppm (typical), ±8 ppm (maximum) ► SNR/THD ► 93.6 dB (typical)/−110 dB (typical) at fIN = 1 kHz ► 93.5 dB (typical)/−104 dB (typical) at fIN = 1 MHz ► Noise spectral density: −167.6 dBFS/Hz ► 20-bit res

20-Bit, 40 MSPS, Differential SAR ADC

GENERAL DESCRIPTION The AD4080 is a high-speed, low noise, low distortion, 20-bit, Easy Drive, successive approximation register (SAR) analog-to-digital converter (ADC). Maintaining high performance (signal-to-noise and distortion (SINAD) ratio > 90 dBFS) at signal frequencies in excess of 1

20-Bit, 40 MSPS, Differential SAR ADC

GENERAL DESCRIPTION The AD4080 is a high-speed, low noise, low distortion, 20-bit, Easy Drive, successive approximation register (SAR) analog-to-digital converter (ADC). Maintaining high performance (signal-to-noise and distortion (SINAD) ratio > 90 dBFS) at signal frequencies in excess of 1

20-Bit, 40 MSPS, Differential SAR ADC

FEATURES ► High performance ► Throughput: 40 MSPS, 46.25 ns conversion latency ► INL: ±4 ppm (typical), ±8 ppm (maximum) ► SNR/THD ► 93.6 dB (typical)/−110 dB (typical) at fIN = 1 kHz ► 93.5 dB (typical)/−104 dB (typical) at fIN = 1 MHz ► Noise spectral density: −167.6 dBFS/Hz ► 20-bit res

14-bit, 200 MSa/s, 16 Mpts arbitrary waveform generator

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