NCE N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6990D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON)

12-200V N-Channel Trench MOSFET

Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky dio

Dual N-Channel Logic Level PowerTrenchÒ MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

Inductors National?셲 150 KHz SIMPLE SWITCHER

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Dual N-Channel Logic Level PowerTrenchTM MOSFET

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Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：119.4 Kbytes Page：5 Pages