丝印代码：FDS6990A；Dual N-Channel Logic Level PowerTrenchÒ MOSFET

General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage a

双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，7.5A，18mΩ

这些N沟道逻辑电平MOSFET采用飞兆半导体先进的PowerTrench工艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越开关性能而定制的。 这些器件非常适合需要线路内低功率损耗和快速开关的低电压和电池供电应用。 •7.5 A, 30 V\n•RDS(ON) = 18 mΩ @ VGS = 10 V\n•RDS(ON) = 23 mΩ @ VGS = 4.5 V\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的RDS(on)\n•高功率和高电流处理能力;

Dual N-Channel Logic Level PowerTrenchTM MOSFET

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Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge.Each MOSFET includes integrated Schottky diode

双 N 沟道，PowerTrench® SyncFET™，30V，7.5A，22mΩ

FDS6990AS设计用于替代同步DC:DC电源中的一个双SO-8 MOSFET和两个肖特基二极管。 此30V MOSFET设计用于最大限度地提高功率转换效率，提供低RDS(ON)和低栅极电荷。 每个MOSFET都包含使用飞兆半导体单片SyncFET技术的集成肖特基二极管。 FDS6990AS在同步整流器中作为低端开关的性能与FDS6990A并联一个肖特基二极管的性能相似。 •7.5 A，30 V。 RDS(ON) = 22 mΩ @ VGS = 10V RDS(ON) = 28 mΩ @ VGS = 4.5V\n•包含SyncFET肖特基体二极管\n•低栅极电荷（10nC典型值）\n•高性能沟道技术可实现极低的RDS(ON)\n•高功率和高电流处理能力;

Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990AS is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON)and low gate charge.Each MOSFET includes integrated Schottky diode

Dual 30V N-Channel PowerTrench SyncFET

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Dual 30V N-Channel PowerTrench SyncFET

文件：899.95 Kbytes Page：8 Pages

Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky dio

Dual 30V N-Channel PowerTrench SyncFET

General Description The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky dio

Dual N-Channel Logic Level PowerTrenchTM MOSFET

文件：119.4 Kbytes Page：5 Pages