位置：首页 > IC中文资料第5436页 > NCE5
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE5 | CIT SWITCH 文件：252.92 Kbytes Page：3 Pages | CIT |   | |
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =20A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5055K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =55A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =50V,ID =80A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
650V 50A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench Field Stop Gen.7 Technology Offering | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
1200V, 50A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low VCE(sat) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-15A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：317.56 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：367.89 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：334.9 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：429.94 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：376.79 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
NCE N-Channel Enhancement Mode Power MOSFET 文件：409.62 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
Dual P-Channel 6 0-V (D-S) MOSFET 文件：1.05533 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：398.66 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
P-Channel 60 V (D-S) MOSFET 文件：1.94284 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：399.15 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
P-Channel 60 V (D-S) MOSFET 文件：941.34 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：357.5 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
P-Channel 60 V (D-S) MOSFET 文件：977.58 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：473.51 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
P-Channel 60-V (D-S) MOSFET 文件：944.97 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：332.25 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | | ||
P-Channel 60 V (D-S) MOSFET 文件：971.65 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：371.5 Kbytes Page：7 Pages | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | |
NCE5产品属性
- 类型
描述
- 型号
NCE5
- 制造商
CIT
- 制造商全称
CIT Relay & Switch
- 功能描述
CIT SWITCH
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE/新洁能 |
25+ |
SOP-8 |
37429 |
NCE/新洁能全新特价NCE55P04S即刻询购立享优惠#长期有货 |
|||
NCE(无锡新洁能) |
2024+ |
TO-220 |
13201 |
诚信服务,绝对原装原盘 |
|||
NCE(无锡新洁能) |
25+ |
TO252 |
52024911 |
明嘉莱只做原装正品现货,NCE/新洁能全系列 |
|||
新洁能 |
22+ |
SOP8 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
NCE新洁能 |
22+ |
SOP-8 |
100000 |
新结能全线供应,支持终端生产 |
|||
新洁能 |
TO-247P_DIP |
30000 |
|||||
NCE |
23+ |
TO-252 |
5000 |
原装热卖现货 |
|||
NCE |
21+ |
TO-252 |
70343 |
全新原装公司现货
|
|||
NCE/新洁能 |
24+ |
SOP-8 |
50000 |
全新原装,一手货源,全场热卖! |
|||
NCE/新洁能 |
24+ |
TO-252 |
10000 |
全新原装现货特价销售,欢迎来电查询 |
NCE5芯片相关品牌
NCE5规格书下载地址
NCE5参数引脚图相关
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NCE5数据表相关新闻
NCE5025K
NCE5025K
2021-7-22NCE5020Q
NCE5020Q
2021-7-22NCE5015S
NCE5015S
2021-7-22NCE4688找NCE代理商上深圳百域芯
NCE4688找NCE代理商上深圳百域芯 NCE60NP2012K NCE60NP2012K NCE603AS NCE603AS NCE01NP03S NCE01NP03S NCE07TD60BF NCE07TD60B NCE07TD60BD NCE07TD60BK NCE07TD60BI NCE10TD60B NCE10TD60BD NCE10TD60BF NCE10TD60BK NCE15TD60D NCE15TD60F NCE15TD60 NCE15TD6
2021-7-6NCE4614找NCE代理商上深圳百域芯
NCE4614找NCE代理商上深圳百域芯 NCE4614 NCE4525 NCE4525 NCE40NP2815G NCE40NP2815G NCE603S NCE603S NCE4688 NCE4688 NCE30D2519K NCE30D2519K NCE30NP07S NCE30NP1812Q NCE30NP1812Q NCE30NP4030G NCE30NP1812K NCE4606B NCEB301Q NCEB301G NCE4614 自
2021-7-5NCE4606A找NCE代理商上深圳百域芯
NCE4606A找NCE代理商上深圳百域芯 NCE30D2519K NCE30D2519K NCE30NP07S NCE30NP07S NCE30NP1812Q NCE30NP1812Q NCE30NP4030G NCE30NP4030G NCE30NP1812K NCE30NP1812K NCE4606B NCE4606B NCEB301Q NCEB301Q NCEB301G NCEB301G NCE609 NCE609 NCE4614 NCE4614
2021-7-5
DdatasheetPDF页码索引
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