| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE55P15I | 丝印代码：NCE55P15I；NCE P-Channel Enhancement Mode Power MOSFET Description The NCE55P15I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-55V,ID =-15A RDS(ON) | NCEPOWER 新洁能 |   | |
NCE55P15I | 12-150V P-Channel Trench MOSFET | NCEPOWER 新洁能 | | |
P-Channel 60 V (D-S) MOSFET 文件：941.34 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：357.5 Kbytes Page：7 Pages | NCEPOWER 新洁能 | | ||
NCE P-Channel Enhancement Mode Power MOSFET 文件：473.51 Kbytes Page：7 Pages | NCEPOWER 新洁能 | | ||
P-Channel 60 V (D-S) MOSFET 文件：977.58 Kbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
丝印代码：NCE55P15K；LCE P-Channel Enhancement Mode Power MOSFET 文件：1.0364 Mbytes Page：6 Pages | LEIDITECH 雷卯电子 | |
更新时间：2026-3-19 9:02:00
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HAMOS/汉姆 |
24+ |
TO252 |
60000 |
全新原装现货 |
|||
NCE |
24+ |
TO252 |
65300 |
一级代理/放心购买! |
|||
NCE/新洁能 |
21+ |
TO-251 |
330000 |
百域芯优势 实单必成 可开13点增值税 |
|||
VBsemi |
23+ |
TO252 |
50000 |
全新原装正品现货,支持订货 |
|||
新洁能 |
25+ |
TO251 |
10000 |
原装现货假一罚十 |
|||
NCE/新洁能 |
21+ |
TO-252 |
30209 |
||||
NCE新洁能 |
21+ |
TO-252 |
25000 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
NCE |
2023+ |
TO-251 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
NCE |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
NCE新洁能 |
21+ |
TO-252 |
50000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
NCE55P15I规格书下载地址
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NCE55P15I数据表相关新闻
DdatasheetPDF页码索引
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