丝印代码：NCE5015S；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE5015S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON)

12-200V N-Channel Trench MOSFET

NPN(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS High Collector-Base Voltage VCEO = 1500 V

N-CHANNEL BROADBAND RF POWER FET

Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package

Zener Diode, 300mW 짹5 Tolerance

Features: Zener Voltage 3.3V to 24V SOT–23 Type Surface Mount Package Absolute Maximum Ratings: Maximim Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Maximim Repetitive Peak Working Current, IZRM . . . . . . . . . .. . . . . . . .

P-channel General purpose

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