| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE4606 | N- and P-Channel 30 V (D-S) MOSFET 文件：1.17611 Mbytes Page：14 Pages | VBSEMI 微碧半导体 |   | |
NCE4606 | N and P-Channel Enhancement Mode Power MOSFET 文件：431.87 Kbytes Page：10 Pages | NCEPOWER 新洁能 | | |
NCE4606 | Complementary MOSFET | NCEPOWER 新洁能 | | |
N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON) | NCEPOWER 新洁能 | | ||
N and P-Channel Enhancement Mode Power MOSFET Description The NCE4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6A RDS(ON) | NCEPOWER 新洁能 | | ||
N and P-Channel Enhancement Mode Power MOSFET 文件：442.15 Kbytes Page：10 Pages | NCEPOWER 新洁能 | | ||
Complementary MOSFET | NCEPOWER 新洁能 | | ||
Complementary MOSFET | NCEPOWER 新洁能 | | ||
N and P-Channel Enhancement Mode Power MOSFET Description The 4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 30V,ID =6.9A RDS(ON) | TUOFENG 拓锋半导体 | | ||
High Q, high self-resonant frequency Special Features • High Q, high self-resonant frequency • High voltage application • Single layer or 3-pi universal wound • Low cost • Varnish coated • Operating temperature: phenolic -55 to +125°C iron & ferrite -55 to +105°C • Current to cause 35°C maximum temperature rise | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Complementary High Density Trench MOSFET 文件：317.57 Kbytes Page：7 Pages | TUOFENG 拓锋半导体 | | ||
Binary reduction valve 文件：99.4 Kbytes Page：1 Pages | FESTOFesto Corporation. 费斯托费斯托（中国）有限公司 | | ||
N- and P-Channel 30 V (D-S) MOSFET 文件：1.22669 Mbytes Page：14 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NCE/新洁能 |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
LEIDITECH |
24+ |
SOP8 |
4000 |
只做原厂渠道 可追溯货源 |
|||
NCE新洁能 |
22+ |
SOP-8 |
100000 |
新结能全线供应,支持终端生产 |
|||
NCE/新洁能 |
20+ |
SOP-8 |
300000 |
现货很近!原厂很远!只做原装 |
|||
VBsemi(台湾微碧) |
2447 |
SOP8 |
105000 |
4000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
NCE/新洁能 |
1925+ |
SOP-8 |
12500 |
原装现货价格优势可供更多可出样 |
|||
NCE/新洁能 |
24+ |
SOP-8 |
50000 |
全新原装,一手货源,全场热卖! |
|||
NCE/新洁能 |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
|||
NK/南科功率 |
2025+ |
SOP-8 |
986966 |
国产 |
NCE4606芯片相关品牌
NCE4606规格书下载地址
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NCE4606数据表相关新闻
NCE4590K
NCE4590K
2021-7-22NCE4585K
NCE4585K
2021-7-22NCE4528K
NCE4528K
2021-7-22NCE4688找NCE代理商上深圳百域芯
NCE4688找NCE代理商上深圳百域芯 NCE60NP2012K NCE60NP2012K NCE603AS NCE603AS NCE01NP03S NCE01NP03S NCE07TD60BF NCE07TD60B NCE07TD60BD NCE07TD60BK NCE07TD60BI NCE10TD60B NCE10TD60BD NCE10TD60BF NCE10TD60BK NCE15TD60D NCE15TD60F NCE15TD60 NCE15TD6
2021-7-6NCE4614找NCE代理商上深圳百域芯
NCE4614找NCE代理商上深圳百域芯 NCE4614 NCE4525 NCE4525 NCE40NP2815G NCE40NP2815G NCE603S NCE603S NCE4688 NCE4688 NCE30D2519K NCE30D2519K NCE30NP07S NCE30NP1812Q NCE30NP1812Q NCE30NP4030G NCE30NP1812K NCE4606B NCEB301Q NCEB301G NCE4614 自
2021-7-5NCE4606A找NCE代理商上深圳百域芯
NCE4606A找NCE代理商上深圳百域芯 NCE30D2519K NCE30D2519K NCE30NP07S NCE30NP07S NCE30NP1812Q NCE30NP1812Q NCE30NP4030G NCE30NP4030G NCE30NP1812K NCE30NP1812K NCE4606B NCE4606B NCEB301Q NCEB301Q NCEB301G NCEB301G NCE609 NCE609 NCE4614 NCE4614
2021-7-5
DdatasheetPDF页码索引
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