Description

The NCE4606B uses advanced trench technology to provide

excellent RDS(ON) and low gate charge . The complementary

MOSFETs may be used to form a level shifted high side

switch, and for a host of other applications.

General Features

● N-Channel

VDS = 30V,ID =6A

RDS(ON) < 25mΩ @ VGS=10V

RDS(ON) < 44mΩ @ VGS=4.5V

● P-Channel

VDS = -30V,ID = -6A

RDS(ON) < 39mΩ @ VGS=-10V

RDS(ON) < 51mΩ @ VGS=-4.5V

● High power and current handing capability

● Lead free product is acquired

● Surface mount package