| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCE3N170 | 丝印代码：TO-220；N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 |   | |
NCE3N170 | 1500-1700V N-Channel VDMOSFET The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits • High speed switching\n• 100% Avalanche Tested; | NCEPOWER 新洁能 | | |
丝印代码：TO-263；N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 | | ||
丝印代码：TO-220F；N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 | | ||
丝印代码：TO-3PF；N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 | | ||
丝印代码：TO-247；N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced technology and design.This high voltage MOSFET fits Switched applications. Features ●High speed switching ●Intrinsic capacitances and Qg minimized ●100% Avalanche Tested Application ● Switched applications | NCEPOWER 新洁能 | | ||
1500-1700V N-Channel VDMOSFET | NCEPOWER 新洁能 | | ||
1500-1700V N-Channel VDMOSFET | NCEPOWER 新洁能 | | ||
MOSFET SWITCHING MOSFET SWITCHING N-CHANNEL - ENHANCEMENT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
P-CHANNEL JFET GENERAL INFORMATION/CROSS REFERENCES | INTERSIL | | ||
N-Channel Enhancement Mode MOSFET Switch FEATURES • Low Switching Voltages • Fast Switching Times • Low Drain-Source Resistance • Low Reverse Transfer Capacitance | CALOGIC | | ||
N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns | LINEAR | | ||
丝印代码：3N170；N-channel 1700 V, 7 廓 typ., 2.6 A PowerMESH??Power MOSFET in a TO-3PF package 文件：702.3 Kbytes Page：12 Pages | STMICROELECTRONICS 意法半导体 | |
NCE3N170产品属性
- 类型
描述
- Technology：
VD MOS
- Product status：
Production
- Package：
TO-220
- Polarity：
N
- BVDSS(V)：
1700
- ID(A)：
2.9
- VTH(V)：
4
- RDS(ON)@10VTyp(mΩ)：
6
- RDS(ON)@10VMax(mΩ)：
8
- VGS(th)(V)：
±30
- CISS(pF)：
1700
- QG(nC)：
33
- PD(W)：
187
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NCE/新洁能 |
21+ |
SOT-23 |
19340 |
||||
NCEPOWER |
25+ |
SOT23 |
98192 |
一站式BOM配单 |
|||
NCE/新洁能 |
21+ |
SOT-23 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NCE |
SOT-23 |
22+ |
6000 |
十年配单,只做原装 |
|||
NCE新洁能 |
25+ |
SOT-23 |
55000 |
原厂代理部份现货价优 |
|||
NCEPOWER |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
|||
NCE新洁能 |
21+ |
SOT-23 |
25000 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
NCE |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
|||
NCEPOWER |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NCE/新洁能 |
25+ |
SOT-23 |
12500 |
原装正品假一赔百 |
NCE3N170规格书下载地址
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