NCE N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3420X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

N-Channel 250-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

Beaded Ties

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3/8 Square Drive Sockets, SAE

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Ultralow Noise, High Accuracy

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Micropower, High Accuracy Voltage References

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