NCE N-Channel Enhancement Mode Power MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3420X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch. General Features ● VDS = 20V,ID = 6A RDS(ON)

N-Channel 250-V (D-S) MOSFET

Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product

3/8 Square Drive Sockets, SAE

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Ultralow Noise, High Accuracy

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Micropower, High Accuracy Voltage References

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