NCE N-Channel Enhancement Mode Power MOSFET

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12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE3080IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =80A RDS(ON)

12-200V N-Channel Trench MOSFET

Inst, 1 Pr #14 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC 150V NPLF THHN OR THWN

Product Description UL Instrumentation, 1 Pair 14AWG (7x22) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC 150V NPLF THHN OR THWN 90C Dry 75C Wet SUN RES DIR BUR

Customer Specification

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Pry Out Plugs

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My-Com precision switches

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