NCE N-Channel Enhancement Mode Power MOSFET

文件：370.65 Kbytes Page：7 Pages

N-Channel 100-V (D-S) MOSFET

文件：949.48 Kbytes Page：7 Pages

N沟道 MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0130A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID =30A RDS(ON)

NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE0130GA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

NCE N-Channel Enhancement Mode Power MOSFET

文件：384.44 Kbytes Page：7 Pages

N-Channel 100-V (D-S) MOSFET

文件：984.22 Kbytes Page：8 Pages

NCE N-Channel Enhancement Mode Power MOSFET

文件：416.16 Kbytes Page：7 Pages

12-200V N-Channel Trench MOSFET

NCE N-Channel Enhancement Mode Power MOSFET

文件：460.84 Kbytes Page：7 Pages

12-200V N-Channel Trench MOSFET

N-Channel 100-V (D-S) MOSFET

文件：984.18 Kbytes Page：8 Pages

Low VF SMD Schottky Barrier Diode

Features - Low forward voltage. - Majority carrier conduction. - Extremely thin package. - Designed for mounting on small surface. - AEC-Q101 Qualified.

SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - AEC-Q101 Qualified & PPAP.

SMD Schottky Barrier Diode

Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - AEC-Q101 Qualified & PPAP.

BALL KNOB

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Low VF Small Signal Schottky Diodes

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