位置：首页 > IC中文资料第248页 > NAND512R3A2BZA6E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND512R3A2BZA6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 |   | |
NAND512R3A2BZA6E | 封装/外壳：63-VFBGA 包装：托盘 描述：IC FLSH 512MBIT PARALLEL 63VFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | |
NAND512R3A2BZA6E | IC FLASH 512M PARALLEL 63VFBGA | STMICROELECTRONICS 意法半导体 | | |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | |
NAND512R3A2BZA6E产品属性
- 类型
描述
- 型号
NAND512R3A2BZA6E
- 功能描述
闪存 128Mbit-1Gbit 1.8/3V
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
STM |
25+ |
BGA |
30000 |
代理全新原装现货,价格优势 |
|||
ST |
6000 |
面议 |
19 |
DIP/SMD |
|||
ST/意法 |
BGA |
125000 |
一级代理原装正品,价格优势,长期供应! |
||||
STMicroelectronics |
18+ |
ICFLASH512MBIT63VFBGA |
6580 |
公司原装现货 |
|||
ST |
23+ |
BGA |
8650 |
受权代理!全新原装现货特价热卖! |
|||
ST |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
ST |
22+ |
63VFBGA (8.5x15) |
9000 |
原厂渠道,现货配单 |
|||
STMICRO |
24+ |
1257 |
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DdatasheetPDF页码索引
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