位置：首页 > IC中文资料第854页 > NAND512R3A2AZA6E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND512R3A2AZA6E | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 |   | |
NAND512R3A2AZA6E | 封装/外壳：55-TFBGA 包装：管件 描述：IC FLSH 512MBIT PARALLEL 55VFBGA 集成电路（IC） 存储器 | STMICROELECTRONICS 意法半导体 | | |
NAND512R3A2AZA6E | IC FLASH 512M PARALLEL 55VFBGA | STMICROELECTRONICS 意法半导体 | | |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | | ||
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supp | STMICROELECTRONICS 意法半导体 | |
NAND512R3A2AZA6E产品属性
- 类型
描述
- 型号
NAND512R3A2AZA6E
- 功能描述
IC FLASH 512MBIT 55VFBGA
- RoHS
否
- 类别
集成电路(IC) >> 存储器
- 系列
-
- 标准包装
576
- 系列
- 格式 -
- 存储器
闪存
- 存储器类型
闪存 - NAND
- 存储容量
512M（64M x 8）
- 速度
-
- 接口
并联
- 电源电压
2.7 V ~ 3.6 V
- 工作温度
-40°C ~ 85°C
- 封装/外壳
48-TFSOP（0.724，18.40mm 宽）
- 供应商设备封装
48-TSOP
- 包装
托盘
- 其它名称
497-5040
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
25+ |
N/A |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST/意法 |
2402+ |
BGA |
8324 |
原装正品!实单价优! |
|||
ST |
17+ |
BGA |
6200 |
100%原装正品现货 |
|||
STM |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
STMicroelectronics |
18+ |
ICFLASH512MBIT55VFBGA |
6580 |
公司原装现货 |
|||
STM |
22+ |
BGA |
20000 |
公司只做原装 品质保障 |
|||
ST |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
1923+ |
BGA |
12008 |
原装进口现货库存专业工厂研究所配单供货 |
|||
STM |
0722+ |
BGA |
231 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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DdatasheetPDF页码索引
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