型号 功能描述 生产厂家 企业 LOGO 操作

512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

STMICROELECTRONICS

意法半导体

512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

STMICROELECTRONICS

意法半导体

512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

STMICROELECTRONICS

意法半导体

512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

STMICROELECTRONICS

意法半导体

512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG

STMICROELECTRONICS

意法半导体

封装/外壳:153-LFBGA 包装:管件 描述:IC FLSH 2GBIT MMC 52MHZ 153LFBGA 集成电路(IC) 存储器

ETC

知名厂家

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

文件:1.81088 Mbytes Page:69 Pages

NUMONYX

2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories

Micron

美光

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

NAND02G产品属性

  • 类型

    描述

  • 型号

    NAND02G

  • 功能描述

    IC FLASH 2GBIT 52MHZ 153LFBGA

  • RoHS

  • 类别

    集成电路(IC) >> 存储器

  • 系列

    -

  • 标准包装

    576

  • 系列

    - 格式 -

  • 存储器

    闪存

  • 存储器类型

    闪存 - NAND

  • 存储容量

    512M(64M x 8)

  • 速度

    -

  • 接口

    并联

  • 电源电压

    2.7 V ~ 3.6 V

  • 工作温度

    -40°C ~ 85°C

  • 封装/外壳

    48-TFSOP(0.724,18.40mm 宽)

  • 供应商设备封装

    48-TSOP

  • 包装

    托盘

  • 其它名称

    497-5040

更新时间:2025-12-27 9:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
25+
BGA
54658
百分百原装现货 实单必成
ST
22+
BGA
20000
公司只做原装 品质保障
ST
24+
BGA
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
MICRON/美光
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST/意法
23+
BGA
50000
全新原装正品现货,支持订货
ST/意法
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
23+
BGA
8560
受权代理!全新原装现货特价热卖!
ST
24+
BGA
65300
一级代理/放心购买!
ST/意法
24+
BGA
20000
只做正品原装现货
ST
23+
BGA632
50000
全新原装正品现货,支持订货

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