位置：首页 > IC中文资料第8365页 > NAND01GR4B2C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NAND01GR4B2C | 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX |   | |
NAND01GR4B2C | 1-Gbit, 2112-byte/1056-word page,1.8 V/3 V, single level cell NAND flash memory | Micron 美光 | | |
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | |
NAND01GR4B2C产品属性
- 类型
描述
- 型号
NAND01GR4B2C
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
24+ |
TSSOP48 |
8000 |
新到现货，只做全新原装正品 |
|||
STM |
23+ |
TSSOP48 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
ST |
25+ |
TSOP-48 |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ST/意法 |
2450+ |
TSSOP48 |
6540 |
只做原厂原装正品现货或订货!终端工厂可以申请样品! |
|||
ST |
22+ |
BGA |
12245 |
现货,原厂原装假一罚十! |
|||
ST |
23+ |
BGA |
3000 |
原装正品假一罚百!可开增票! |
|||
STM |
23+ |
TSSOP48 |
50000 |
全新原装正品现货,支持订货 |
|||
NUMONYX |
25+ |
BGA |
10000 |
全新原装现货库存 |
|||
ST/意法 |
24+ |
TSOP48 |
9600 |
原装现货,优势供应,支持实单! |
|||
MICRON |
21+ |
TSSOP |
10000 |
原装现货假一罚十 |
NAND01GR4B2C规格书下载地址
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DdatasheetPDF页码索引
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