包装：散装 描述：BROAD RANGE INFRARED THERMOMETER 测试与计量 温度计

包装：散装 描述：BROAD RANGE INFRARED THERMOMETER 测试与计量 温度计

N-channel MOSFET 650V, 5.5A, 2.1

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 2.1 MAX. (VGS = 10 V, ID = 2.75 A)  Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±5.5

N-channel MOSFET 650V, 5.5A, 2.1

Description The N6504NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 2.1 MAX. (VGS = 10 V, ID = 2.75 A)  Low input capacitance Ciss = 950pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±5.5

N-channel MOSFET 650V, 7.5A, 1.3

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 1.3 MAX. (VGS = 10 V, ID = 3.75 A)  Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±7.

N-channel MOSFET 650V, 7.5A, 1.3

Description The N6506NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 1.3 MAX. (VGS = 10 V, ID = 3.75 A)  Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±7.

N-channel MOSFET 650V, 9.5A, 0.85

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 0.85 MAX. (VGS = 10 V, ID = 4.75 A)  Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±9

N-channel MOSFET 650V, 9.5A, 0.85

Description The N6508NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Low on-state resistance RDS (on) = 0.85 MAX. (VGS = 10 V, ID = 4.75 A)  Low input capacitance Ciss = 2160pF TYP. (VDS = 10V, VGS = 0 V)  High current ID(DC) = ±9

温度控制器

Silicon planer type (cathode common)

Silicon planer type (cathode common) For switching ■Features ●High reverse voltage VR ●Low forward voltage VF ●Fast reverse recovery time trr

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SCHOTTKY BARRIER RECTIFIERS 6 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • Gua

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics Output Power = 50 Watts Minimum Gain = 5.2 dB @ 440, 470 M

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 60 Volts CURRENT - 6 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd vo

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity •