| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
300V, 50A PDP IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC | FAIRCHILD 仙童半导体 |   | ||
300V, 50A PDP IGBT General Description Using Novel Trench IGBT Technology, Fairchild’s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. Features • High current capability • Low saturation voltage: VCE(sat) =1.4V @ IC | FAIRCHILD 仙童半导体 | | ||
Advance Technical Information High Current Power MOSFET High Current Power MOSFET N-Channel Enhancement Mode Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Eas | IXYS 艾赛斯 | | ||
Avalanche Rated N-channel MOSFET 文件：123.35 Kbytes Page：2 Pages | SSDI | | ||
Avalanche Rated N-channel MOSFET 文件：123.35 Kbytes Page：2 Pages | SSDI | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
24+ |
TO220F |
9600 |
原装现货,优势供应,支持实单! |
|||
FAIRCHILD/仙童 |
23+ |
12468 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
FAIRCHILD/仙童 |
23+ |
TO220F |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD/仙童 |
2447 |
TO220F |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Fairchild |
24+ |
TO-220F |
174 |
||||
Fairchild/ON |
22+ |
TO220F |
9000 |
原厂渠道,现货配单 |
|||
ONSemiconductor |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
onsemi(安森美) |
25+ |
TO-220F-3 |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
TO220 |
2774 |
原装正品,假一罚十! |
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