isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS=40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL MOSFET FOR SWITCHING

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Nch Single Power Mosfet 40V 100A 3.7Mohm To-220

N-CHANNEL MOSFET FOR SWITCHING

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Connectorized PIN Photodiodes

Description The PDT range of products includes a variety of connectorized PIN photodiodes designed for wide operating temperature, low cost applications such as fiber in the loop. The planar InGaAs photodiodes are manufactured using our MOVPE growth technology and give low leakage, high responsiv

Connectorized PIN Photodiodes

Description The PDT range of products includes a variety of connectorized PIN photodiodes designed for wide operating temperature, low cost applications such as fiber in the loop. The planar InGaAs photodiodes are manufactured using our MOVPE growth technology and give low leakage, high responsiv

Connectorized PIN Photodiodes

Description The PDT range of products includes a variety of connectorized PIN photodiodes designed for wide operating temperature, low cost applications such as fiber in the loop. The planar InGaAs photodiodes are manufactured using our MOVPE growth technology and give low leakage, high responsiv

TVSarray ??Series

DESCRIPTION (300 watt) This 4 pin 1 line unidirectional ULTRA LOW CAPACITANCE array is designed for use in applications requiring board level protection from voltage transients caused by electrostatic discharge (ESD) as defined by IEC 1000-4-2, electrical fast transients (EFT) per IEC 1000-4-4 an

1.2V and 2.5V Micropower VOLTAGE REFERENCE

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