The RF Small Signal Line

Gallium Arsenide PHEMT

Pseudomorphic High Electron Mobility Transistor

Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

• Performance Specifications at 3.5 V, 850 MHz:

Output Power = 31 dBm Min

Power Gain = 11 dB Typ

Efficiency = 70 Min

• Guaranteed Ruggedness at Load VSWR = 20:1

• New Plastic Surface Mount Package

• Available in Tape and Reel Packaging Options:

T1 suffix = 1,000 Units per Reel

• Device Marking = 9822