The RF Small Signal Line

Gallium Arsenide

N–Channel Depletion–Mode MESFET

Designed for use in driver stages of moderate power RF amplifiers to 2 GHz. Typical applications are cellular radios and personal communication transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT.

• Performance Specifications at 900 MHz, 5.8 V:

Output Power = 21 dBm

Power Gain = 14 dB Min

Drain Efficiency = 55 Min

• Plastic Surface Mount Package

• Order MRF9811T1 for Tape and Reel Packaging.

T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.