The RF Small Signal Line

Silicon Lateral FET

N–Channel Enhancement–Mode MOSFET

Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.

• Performance Specifications at 5.8 V, 900 MHz:

Output Power = 30 dBm Min

Power Gain = 10 dB Typ

Efficiency = 50 Min

• Guaranteed Ruggedness at Load VSWR = 20:1

• New Plastic Surface Mount Package

• Available in Tape and Reel Packaging.

T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel

• Device Marking = 9745