RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 850 mA,

Pout = 18 Watts Avg., Full Frequency Band, IS-95 CDMA (Pilot, Sync,

Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.

PAR = 9.8 dB @ 0.01 Probability on CCDF.

Power Gain — 14.5 dB

Drain Efficiency — 25.8

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Bandwidth

ACPR @ 885 kHz Offset — -51 dB in 30 kHz Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 90 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.