RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large- signal, commonsource amplifier applications in 28 Volt base station equipment.

• Typical 2-carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA,

Pout = 12 Watts Avg., 1990 MHz, IS-95 (Pilot, Sync, Paging, Traffic Codes

8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01

Probability on CCDF.

Power Gain — 14 dB

Drain Efficiency — 23

IM3 @ 2.5 MHz Offset — -37 dBc in 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -51 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 12 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.