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M5M4V4265CTP-6S中文资料
M5M4V4265CTP-6S数据手册规格书PDF详情
DESCRIPTION
This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
FEATURES
● Standard 40 pin SOJ, 44 pin TSOP (II)
● Single 3.3±0.3V supply
● Low stand-by power dissipation
CMOS Input level ---------------------------------- 1.8mW (Max)
CMOS Input level ---------------------------------- 360µW (Max) *
● Operating power dissipation
M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)
M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)
M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)
● Self refresh capability *
Self refresh current ------------------------------ 100µA (Max)
● Extended refresh capability
Extended refresh current -------------------------- 100µA (Max)
● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.
● Early-write mode, OE and W to control output buffer impedance
● 512 refresh cycles every 8.2ms (A0~A8)
● 512 refresh cycles every 128ms (A0~A8) *
● Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only
APPLICATION
Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT
M5M4V4265CTP-6S产品属性
- 类型
描述
- 型号
M5M4V4265CTP-6S
- 制造商
Mitsubishi Electric
- 功能描述
256K X 16 EDO DRAM, 60 ns, PDSO40
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MITSUBISHI/三菱 |
23+ |
TSSOP |
35680 |
只做进口原装QQ:373621633 |
|||
MITSUBISHI |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
|||
MITSUBISHI |
24+ |
TSSOP |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
|||
MITSUBISHI |
98+ |
TSSOP |
480 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MITSUBISHI |
25+ |
TSSOP |
11223 |
只做原装进口!正品支持实单! |
|||
MITSUBISHI |
23+ |
TSSOP |
66600 |
专业芯片配单原装正品假一罚十 |
|||
MITSUBISHI |
23+ |
TSSOP |
480 |
全新原装正品现货,支持订货 |
|||
MITSUBISHI/三菱 |
25+ |
TSOP |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
MITSUBISHI/三菱 |
22+ |
TSOP |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
MITSUBISHI/三菱 |
24+ |
TSOP |
990000 |
明嘉莱只做原装正品现货 |
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