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M5M4V4265CJ中文资料
厂家型号 | M5M4V4265CJ |
文件大小 | 317.4Kbytes |
页面数量 | 31页 |
功能描述 | EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM |
数据手册 | |
生产厂商 | Mitsubishi Electric Semiconductor |
简称 | Mitsubishi【三菱电机】 |
中文名称 | 三菱电机半导体(Mitsubishi Electric Semiconductor)官网 |
LOGO |
M5M4V4265CJ数据手册规格书PDF详情
DESCRIPTION
This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.
FEATURES
● Standard 40 pin SOJ, 44 pin TSOP (II)
● Single 3.3±0.3V supply
● Low stand-by power dissipation
CMOS Input level ---------------------------------- 1.8mW (Max)
CMOS Input level ---------------------------------- 360µW (Max) *
● Operating power dissipation
M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)
M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)
M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)
● Self refresh capability *
Self refresh current ------------------------------ 100µA (Max)
● Extended refresh capability
Extended refresh current -------------------------- 100µA (Max)
● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.
● Early-write mode, OE and W to control output buffer impedance
● 512 refresh cycles every 8.2ms (A0~A8)
● 512 refresh cycles every 128ms (A0~A8) *
● Byte or word control for Read/Write operation (2CAS, 1W type)
* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only
APPLICATION
Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT
M5M4V4265CJ产品属性
- 类型
描述
- 型号
M5M4V4265CJ
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MITSUBISHI |
23+ |
NA |
25060 |
只做进口原装,终端工厂免费送样 |
|||
MITSUBISHI |
22+ |
TSOP |
5000 |
全新原装现货!价格优惠!可长期 |
|||
MITSUBISHI |
22+ |
TSOP |
32350 |
原装正品 假一罚十 公司现货 |
|||
MITSUBISHI |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
MITSUBISHI |
97+ |
TSOP |
1373 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MITSUBISHI |
24+ |
TSOP |
10093 |
只做原装进口!正品支持实单! |
|||
MITSUBISHI |
TSOP |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
MITSUBISHI |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
MITSUBISHI |
23+ |
原装正品现货 |
10000 |
TSOP |
|||
MITSUBISHI |
2020+ |
TSOP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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