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M5M4V4265CJ中文资料

厂家型号

M5M4V4265CJ

文件大小

317.4Kbytes

页面数量

31

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

Mitsubishi Electric Semiconductor

简称

Mitsubishi三菱电机

中文名称

三菱电机半导体(Mitsubishi Electric Semiconductor)官网

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M5M4V4265CJ数据手册规格书PDF详情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360µW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100µA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100µA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

M5M4V4265CJ产品属性

  • 类型

    描述

  • 型号

    M5M4V4265CJ

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

更新时间:2024-9-21 8:02:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI
23+
NA
25060
只做进口原装,终端工厂免费送样
MITSUBISHI
22+
TSOP
5000
全新原装现货!价格优惠!可长期
MITSUBISHI
22+
TSOP
32350
原装正品 假一罚十 公司现货
MITSUBISHI
23+
TSOP
50000
全新原装正品现货,支持订货
MITSUBISHI
97+
TSOP
1373
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MITSUBISHI
24+
TSOP
10093
只做原装进口!正品支持实单!
MITSUBISHI
TSOP
699839
集团化配单-有更多数量-免费送样-原包装正品现货-正规
MITSUBISHI
589220
16余年资质 绝对原盒原盘 更多数量
MITSUBISHI
23+
原装正品现货
10000
TSOP
MITSUBISHI
2020+
TSOP
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可

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Mitsubishi Electric Semiconductor 三菱电机半导体(Mitsubishi Electric Semiconductor)

中文资料: 19481条

三菱电机半导体(Mitsubishi Electric Semiconductor)是三菱电机株式会社的一部分,专注于半导体产品的开发和制造。公司成立于20世纪,并在全球范围内提供广泛的半导体解决方案,涵盖功率半导体、模拟和数字集成电路、微控制器和ASIC等产品。三菱电机半导体在电力、汽车、工业、通信以及消费电子等领域发挥着关键作用,致力于不断创新和技术进步,以满足日益增长的市场需求。凭借其强大的技术实力和可靠的产品质量,三菱电机半导体在全球半导体行业中占据重要地位。