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M5M4V4265CTP-7中文资料

厂家型号

M5M4V4265CTP-7

文件大小

317.4Kbytes

页面数量

31

功能描述

EDO (HYPER PAGE) MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM

EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

数据手册

下载地址一下载地址二到原厂下载

生产厂商

Mitsubishi Electric Semiconductor

简称

Mitsubishi三菱电机

中文名称

三菱电机株式会社官网

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M5M4V4265CTP-7数据手册规格书PDF详情

DESCRIPTION

This is a family of 262144-word by 16-bit dynamic RAMs with EDO mode fuction, fabricated with the high performance CMOS process, and is ideal for the buffer memory systems of personal computer graphics and HDD where high speed, low power dissipation, and low costs are essential. The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. The lower supply (3.3V) operation, due to the optimization of transistor structure, provides low power dissipation while maintaining high speed operation. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is low enough for battery back-up application. This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES

● Standard 40 pin SOJ, 44 pin TSOP (II)

● Single 3.3±0.3V supply

● Low stand-by power dissipation

CMOS Input level ---------------------------------- 1.8mW (Max)

CMOS Input level ---------------------------------- 360µW (Max) *

● Operating power dissipation

M5M4V4265CXX-5,-5S -------------------------------- 486mW (Max)

M5M4V4265CXX-6,-6S -------------------------------- 432mW (Max)

M5M4V4265CXX-7,-7S -------------------------------- 396mW (Max)

● Self refresh capability *

Self refresh current ------------------------------ 100µA (Max)

● Extended refresh capability

Extended refresh current -------------------------- 100µA (Max)

● EDO mode (512-column random access), Read-modify-write, RASonly refresh, CAS before RAS refresh, Hidden refresh capabilities.

● Early-write mode, OE and W to control output buffer impedance

● 512 refresh cycles every 8.2ms (A0~A8)

● 512 refresh cycles every 128ms (A0~A8) *

● Byte or word control for Read/Write operation (2CAS, 1W type)

* : Applicable to self refresh version (M5M4V4265CJ,TP-5S,-6S, -7S : option) only

APPLICATION

Microcomputer memory, Refresh memory for CRT, Frame buffer memory for CRT

M5M4V4265CTP-7产品属性

  • 类型

    描述

  • 型号

    M5M4V4265CTP-7

  • 制造商

    MITSUBISHI

  • 制造商全称

    Mitsubishi Electric Semiconductor

  • 功能描述

    EDO(HYPER PAGE) MODE 4194304-BIT(262144-WORD BY 16-BIT) DYNAMIC RAM

更新时间:2025-5-15 11:02:00
供应商 型号 品牌 批号 封装 库存 备注 价格
MITSUBISHI
23+
NA
25060
只做进口原装,终端工厂免费送样
MITSUBISHI
24+
20-SOP
2560
绝对原装!现货热卖!
MITSUBISHI
24+
20-SOP
100
原装现货假一罚十
MITSUBISHI
2025+
TSOP
4365
全新原厂原装产品、公司现货销售
MITSUBISHI/三菱
23+
TSOP20
50000
全新原装正品现货,支持订货
MITSUBISHI/三菱
24+
NA/
600
优势代理渠道,原装正品,可全系列订货开增值税票
MIT
23+
TSOP
8000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
24+
3000
公司存货
MITSUBIS
25+23+
TSOP
37264
绝对原装正品全新进口深圳现货
MITSUBIS
23+
TSOP
89630
当天发货全新原装现货

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Mitsubishi Electric Semiconductor 三菱电机株式会社

中文资料: 19503条

三菱电机半导体(Mitsubishi Electric Semiconductor)是三菱电机株式会社的一部分,专注于半导体产品的开发和制造。公司成立于20世纪,并在全球范围内提供广泛的半导体解决方案,涵盖功率半导体、模拟和数字集成电路、微控制器和ASIC等产品。三菱电机半导体在电力、汽车、工业、通信以及消费电子等领域发挥着关键作用,致力于不断创新和技术进步,以满足日益增长的市场需求。凭借其强大的技术实力和可靠的产品质量,三菱电机半导体在全球半导体行业中占据重要地位。