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MY245A

0.4 DUAL DIGIT NUMERIC DISPLAYS

SEVEN SEGMENT NUMERIC DISPLAY High Performance GaP, GaAsP Disc 0.4 inch Character Height High Contrast Wide Viewing Angle Common Anode - MS245A, MG245A, MY245A, MO245A Common Cathode - MS245C, MG245C, MY245C, MO245C

MICRO-ELECTRONICS

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD246 Series ● 80 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Customer-Specified Selections Available

POINN

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 4000 Typ @ IC = 5A • Monolithic Construction with B

NTE

N-channel silicon field-effect transistors

文件:97.4 Kbytes Page:11 Pages

PHILIPS

飞利浦

N-channel silicon field-effect transistors

文件:97.4 Kbytes Page:11 Pages

PHILIPS

飞利浦

VHF power MOS transistor

文件:91.6 Kbytes Page:12 Pages

PHILIPS

飞利浦

MY245A产品属性

  • 类型

    描述

  • 型号

    MY245A

  • 制造商

    MICRO-ELECTRONICS

  • 制造商全称

    Micro Electronics

  • 功能描述

    0.4 DUAL DIGIT NUMERIC DISPLAYS

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