31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

The RF Small Signal Line Silicon Lateral FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.

HIGH FREQUENCY POWER TRANSISTOR LDMOS FET

The RF Small Signal Line Silicon Lateral FET N–Channel Enhancement–Mode MOSFET Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems. • Performance Specifications at 5.8 V, 900 MHz: Output Power = 30 d