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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MX5012 | MEDICAL GRADE COMMON MODE CHOKE 文件：168.53 Kbytes Page：1 Pages | MPSIND 美国芯源 |   | |
MEDICAL GRADE COMMON MODE CHOKE 文件：168.53 Kbytes Page：1 Pages | MPSIND 美国芯源 | | ||
MEDICAL GRADE COMMON MODE CHOKE 文件：168.53 Kbytes Page：1 Pages | MPSIND 美国芯源 | | ||
MEDICAL GRADE COMMON MODE CHOKE 文件：168.53 Kbytes Page：1 Pages | MPSIND 美国芯源 | | ||
MEDICAL GRADE COMMON MODE CHOKE 文件：168.53 Kbytes Page：1 Pages | MPSIND 美国芯源 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® SINGLE DIE ISOTOP® PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Zener Diode, 1/2 Watt 짹5 Tolerance Features: ● Zener Voltage 2.4 to 200V ● DO35 Package | NTE | |
MX5012产品属性
- 类型
描述
- 型号
MX5012
- 制造商
MPSIND
- 制造商全称
MPS Industries, Inc.
- 功能描述
MEDICAL GRADE COMMON MODE CHOKE
MX5012芯片相关品牌
MX5012规格书下载地址
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