SWITCHMODE TM Power Rectifiers

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封装/外壳：DO-201AA，DO-27，轴向 包装：卷带（TR） 描述：DIODE GEN PURP 100V 4A DO201AD 分立半导体产品 二极管 - 整流器 - 单

Diode Switching 100V 4A 2-Pin DO-201AD T/R

Switch-Mode Power Rectifiers

These state−of−the−art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features • Ultrafast 25 ns, 50 ns and 75 ns Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature G

SWITCHMODE Power Rectifiers

文件：118.9 Kbytes Page：8 Pages

SWITCHMODE TM Power Rectifiers

文件：67.89 Kbytes Page：7 Pages

封装/外壳：DO-201AA，DO-27，轴向 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE GEN PURP 100V 4A DO201AD 分立半导体产品 二极管 - 整流器 - 单

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

N-channel silicon field-effect transistors

DESCRIPTION Asymmetrical N-channel planar epitaxial junction field-effect transistors in a plastic TO-92 variant; intended for applications up to the VHF range. These FETs can be supplied in four IDSS groups. Special features are the low feedback capacitance and the low noise figure. Thanks

5 AMPERE POWER TRANSISTOR NPN SILICON

High Voltage NPN Silicon Transistors . . . designed for medium to high voltage inverters, converters, regulators and switching circuits. • High Collector–Emitter Voltage — VCEO = 200 Volts • DC Current Gain Specified @ 1.0 and 2.5 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.8

POWER RECTIFIERS(4.0A,500-1000V)

Fast Settling, Video Op Amp with Disable

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