200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

Super Fast Recovery Diode, 200A

Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching

Silicon Super Fast Recovery Diode

Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive

HIGH POWER- SUPER FAST RECTIFIERS

Features • High Surge Capability • Types up to 600 V VRRM

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 50V 100A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Super Fast Recovery Rectifiers

Silicon Super Fast Recovery Diode

文件：694.09 Kbytes Page：3 Pages

Super Fast Recovery Diode, 200A

Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching

Silicon Super Fast Recovery Diode

Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive

HIGH POWER- SUPER FAST RECTIFIERS

Features • High Surge Capability • Types up to 600 V VRRM

Silicon Super Fast Recovery Diode

文件：694.09 Kbytes Page：3 Pages

Super Fast Recovery Rectifiers

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 50V 100A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Super Fast Recovery Diode

文件：694.09 Kbytes Page：3 Pages

20 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Rating to 1000V PRV • Ideal for printed circuit board • Low forward voltage drop, high current ca

20A GLASS PASSIVATED BRIDGE RECTIFIER

Features Glass Passivated Die Construction High Case Dielectric Strength of 1500V RMS Low Reverse Leakage Current Surge Overload Rating to 240A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized

15 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

Switching Type(Chopper Self Oscillation Type)

Features ● Requires only 4 external components ● Small size and high efficiency ● Low switching noise ● Variable output voltage ● Use of Sanken semiconductors components ensures high reliability Applications ● For power supplies in office equipment such as electronic typewri