15 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Description The 20005 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 15 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold meta

15 Watts, 860-900 MHz Cellular Radio RF Power Transistor

20A GLASS PASSIVATED BRIDGE RECTIFIER

Features Glass Passivated Die Construction High Case Dielectric Strength of 1500V RMS Low Reverse Leakage Current Surge Overload Rating to 240A Peak Ideal for Printed Circuit Board Applications Plastic Material - UL Flammability Classification 94V-0 UL Listed Under Recognized

20 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Rating to 1000V PRV • Ideal for printed circuit board • Low forward voltage drop, high current ca

GLASS PASSIVATED BRIDGE RECTIFIER

FEATURE • UL Listed Under Recognized Component Index, File Number E338195 • Glass passivated chip junctions • High case dielectric stength • Low Reverse Leakage Current • High surge current capability • Ideal for Printed Circuit Board Applications

SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIER

VOLTAGE RANGE 50 to 1000 Volts CURRENT 20.0 Amperes FEATURES • Plastic package has UL Flammability Glassification 94V-0 • Glass passivated chip junctions • High case dielectric strength of 1500 VRMS • High surge current capability • High temperature soldering guaranteed 260℃/10 secon

Single Phase Bridge Rectifiers

FEATURES * Rating to 1000V PRV * Ideal for printed circuit board * Low forward voltage drop, high current capability * Reliable low cost construction utilizing molded plastic technique results in inexpensive product