100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

Diode Switching 200V 100A

ULTRAFAST RECTIFIERS

ULTRAFAST SWITCHMODE POWER RECTIFIER ... designed for use in switching power supplies, inverters, and as free wheeling diodes. These state-of-the-art devices have the following features: ● Dual Diode Construction ● Low Leakage Current ● Low Forward Voltage ● 175°C Operating Junction Temperatu

HIGH POWER- SUPER FAST RECTIFIERS

Features • High Surge Capability • Types up to 600 V VRRM

Super Fast Recovery Diode, 100A

Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching

Silicon Super Fast Recovery Diode

Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

Super Fast Recovery Diode, 100A

Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching

Silicon Super Fast Recovery Diode

Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive

HIGH POWER- SUPER FAST RECTIFIERS

Features • High Surge Capability • Types up to 600 V VRRM

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 200V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Super Fast Recovery Diode

文件：693.08 Kbytes Page：3 Pages

Diode Switching 200V 100A 3-Pin(3+Tab) Twin Tower

Super Fast Recovery（FRED）

封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 200V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Super Fast Recovery Diode

文件：693.08 Kbytes Page：3 Pages

POWER TRANSISTORS(60A,200-250V,250W)

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol