POWER TRANSISTORS(60A,200-250V,250W)

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated s

NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS

FEATURES: 1. Fast Turn–Off Times 150 ns Inductive Fall Time at 25º C (Typ) 750 ns Inductive Storage Time at 25 ºC (Typ) 2. Operating Temperature Range –65 to +200º C 3. 100º C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturatio

250W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

NPN SILICON POWER DARLINGTON TRANSISTORS

Trans Darlington NPN 200V 60A 3-Pin(2+Tab) TO-3

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • INTERNALLY MATCHED • Performance at 960 MHz, 28 Vol