| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUR10010CT | 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC |   | |
MUR10010CT | ULTRAFAST RECTIFIERS ULTRAFAST SWITCHMODE POWER RECTIFIER ... designed for use in switching power supplies, inverters, and as free wheeling diodes. These state-of-the-art devices have the following features: ● Dual Diode Construction ● Low Leakage Current ● Low Forward Voltage ● 175°C Operating Junction Temperatu | MOTOROLA 摩托罗拉 | | |
MUR10010CT | Super Fast Recovery Diode, 100A Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching | NAINA | | |
MUR10010CT | HIGH POWER- SUPER FAST RECTIFIERS Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | |
MUR10010CT | Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | |
MUR10010CT | Silicon Super Fast Recovery Diode 文件：693.08 Kbytes Page：3 Pages | GENESIC | | |
MUR10010CT | 封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 100V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | |
MUR10010CT | Diode Switching 100V 100A 3-Pin(3+Tab) Twin Tower | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
MUR10010CT | Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | |
HIGH POWER- SUPER FAST RECTIFIERS Features • High Surge Capability • Types up to 600 V VRRM | AMERICASEMI | | ||
Super Fast Recovery Diode, 100A Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching | NAINA | | ||
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive | GENESIC | | ||
Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 100V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
Silicon Super Fast Recovery Diode 文件：693.08 Kbytes Page：3 Pages | GENESIC | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
SLOTTED SWITCH INFRARED LED+PHOTO IC APPLICATIONS ● OPTICAL SWITCH ● SHAFT POSITION AND VELOCITY SENSOR | MARKTECH | | ||
ULTRA FAST RECOVERY MODULES Ultrafast Recovery Modules • Ultra Fast Recovery • 175°C Junction Temperature • VRRM 100 to 800 Volts • Electrically isolated base • 2 X 50 Amp current rating • ROHS Compliant | MICROSEMI 美高森美 | |
MUR10010CT产品属性
- 类型
描述
- Peak Reverse Repetitive Voltage：
100V
- Peak Reverse Recovery Time：
75ns
- Peak Reverse Current：
25@50VuA
- Peak Non-Repetitive Surge Current：
400A
- Peak Forward Voltage：
1.3@50AV
- Operating Junction Temperature：
-40 to 175°C
- Minimum Operating Temperature：
-40°C
- Maximum Operating Temperature：
175°C
- Maximum Continuous Forward Current：
100A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
|||
25+ |
6 |
公司优势库存 热卖中! |
|||||
MOTOROLA |
22+ |
MODULE |
3000 |
原装正品,支持实单 |
|||
MOTOROLA |
23+ |
模块 |
900 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
IXYS |
24+ |
模块 |
6980 |
原装现货,可开13%税票 |
|||
MOTOROLA |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
24+ |
5000 |
公司存货 |
|||||
GeneSiC Semiconductor |
22+ |
Twin Tower |
9000 |
原厂渠道,现货配单 |
|||
GeneSiC Semiconductor |
24+ |
DO/TO |
986 |
碳化硅二极管原厂正品全系列现货 |
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DdatasheetPDF页码索引
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