TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM

TMOS E−FET Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

Power Field Effect Transistor

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Power Field Effect Transistor

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

PolarHV HiPerFET Power MOSFET ISOPLUS220

N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(

PolarHV Power MOSFET

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.6Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

PolarHV Power MOSFET

N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Features Fast Recovery diode Unclamped Inductive Switching (UIS) rated International standard packages Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings