N-Channel Enhancement Mode

Fast Intrinsic Diode

Avalanche Rated

Features

Silicon chip on Direct-Copper-Bond substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

Low drain to tab capacitance(<35pF)

Low RDS (on) HDMOS™ process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS) rated

Fast intrinsic Rectifier

Applications

DC-DC converters

Battery chargers

Switched-mode and resonant-mode power supplies

DC choppers

AC motor control

Advantages

Easy assembly: no screws, or isolation foils required

Space savings

High power density

Low collector capacitance to ground (low EMI)