N-Channel Power MOSFETs, 4.5 A, 450V/500V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ± 20V • Silicon Gate for Fast Switchi

N-Channel Power MOSFETs, 4.5 A, 450 V/500 V

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Trans MOSFET N-CH 500V 4A

TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

Trans MOSFET N-CH 500V 4A 3-Pin(3+Tab) TO-220 Rail

N-Channel 600V (D-S)Power MOSFET

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High Energy Power FET

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TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS

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High Energy Power FET

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MOSFET - Power, N-Channel, UniFET II, Ultra FRFET 500 V, 2 A, 3

Description UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche en

500V N-Channel MOSFET

Features • 3.4A, 500V, RDS(on) = 2.7Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

4 Amps, 500 Volts N-CHANNEL POWER MOSFET

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4A, 500V N-CHANNEL POWER MOSFET

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Fast Switching

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