N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

Power Field Effect Transistor

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TWOS These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds — Switching Tim

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Trans MOSFET N-CH 600V 3A 3-Pin(3+Tab) TO-220

High Energy Power FET

TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS

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High Energy Power FET

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High Frequency Use High-Q (Non Magnetic Core) QF, QE

■ Features Capable of being Re-fl ow or fl ow soldered. Unique Ceramic Core/Laser-cut Technology. Non polarity product. High self resonance frequency. Good for mounting. RoHS compliant ■ Recommended Applications RF circuitry for cellular phones and wireless communication equipment

High Frequency Use High-Q (Non Magnetic Core) QF, QE

■ Features Capable of being Re-fl ow or fl ow soldered. Unique Ceramic Core/Laser-cut Technology. Non polarity product. High self resonance frequency. Good for mounting. RoHS compliant ■ Recommended Applications RF circuitry for cellular phones and wireless communication equipment

High Frequency Use High-Q (Non Magnetic Core) QF, QE

■ Features Capable of being Re-fl ow or fl ow soldered. Unique Ceramic Core/Laser-cut Technology. Non polarity product. High self resonance frequency. Good for mounting. RoHS compliant ■ Recommended Applications RF circuitry for cellular phones and wireless communication equipment

High Frequency Use High-Q (Non Magnetic Core) QF, QE

■ Features Capable of being Re-fl ow or fl ow soldered. Unique Ceramic Core/Laser-cut Technology. Non polarity product. High self resonance frequency. Good for mounting. RoHS compliant ■ Recommended Applications RF circuitry for cellular phones and wireless communication equipment

High Frequency Use (Non Magnetic Core)

High Frequency Use (Non Magnetic Core) RF, RE, ND, NC, NA ■ Features ● High frequency capability due to its non magnetic core. ● Capable of being Re-fl ow or fl ow soldered. ● Wide line-up from 1005 to 3225 case sizes. ● Good for mounting. ● RoHS compliant ■ Recommended Applications ● RF c