Power Field Effect Transistor

N-Channel Enhancement-Mode

Silicon Gate TWOS

These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds — Switching Times

Specified at 100°C

• Designers Data — IDSS- VGS(on)- VGS(th) and SOA Specified

at Elevated Temperature

• Rugged — SOA is Power Dissipation Limited

• Source-to-Drain Diode Characterized for Use With Inductive Loads