TMOSPOWERFET3.0AMPERES1200VOLTSRDS(on)=5.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate Thisadvancedhigh–voltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffersadrain–to–sourcediodewithfastrecoverytime.

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS=1200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

1-LineHighPowerTVSDiode

Features 5400Wpeakpulsepower(8/20 Lowleakage:nAlevel Lowoperatingvoltage:12V Ultralowclampingvoltage Onepowerlineprotects Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)80A(5/50ns)

1-LineHighPowerTVSDiode

Features Ultralowleakage:nAlevel Operatingvoltage:12V Lowclampingvoltage Complieswithfollowingstandards: —|EC61000-4-2(ESD)immunitytest Airdischarge:+30kV Contactdischarge:+30kV —IEC61000-4-5(Lightning)200A(8/20us) RoHSCompliant